inchange semiconductor isc product specification isc silicon npn darlington power transistors bdt61/a/b/c description dc current gain -h fe = 750(min)@ i c = 1.5a collector-emitter sustaining voltage- : v ceo(sus) = 60v(min)- bdt61; 80v(min)- bdt61a; 100v(min)- bdt61b; 120v(min)- BDT61C complement to type bdt60/a/b/c applications designed for use in audio amplifier output stages , general purpose amplifier and high s peed switching applications absolute maximum rating s (t a =25 ) symbol parameter value unit bdt61 60 bdt61a 80 bdt61b 100 v cbo collector-base voltage BDT61C 120 v bdt61 60 bdt61a 80 bdt61b 100 v ceo collector-emitter voltage BDT61C 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 4 a i b b base current 0.1 a collector power dissipation t a =25 2 p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage ttemperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w r th j-c thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistors bdt61/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt61 60 bdt61a 80 bdt61b 100 v (br)ceo collector-emitter breakdown voltage BDT61C i c = 30ma; i b = 0 120 v v ce (sat) collector-emitter saturation voltage i c = 1.5a; i b = 6ma 2.5 v v be (on) base-emitter on voltage i c = 1.5a ; v ce = 3v 2.5 v bdt61 v cb = 60v; i e = 0 v cb = 30v; i e = 0; t j =150 0.2 2.0 bdt61a v cb = 80v; i e = 0 v cb = 40v; i e = 0; t j =150 0.2 2.0 bdt61b v cb = 100v; i e = 0 v cb = 50v; i e = 0; t j =150 0.2 2.0 i cbo collector cutoff current BDT61C v cb = 120v; i e = 0 v cb = 60v; i e = 0; t j =150 0.2 2.0 ma bdt61 v ce = 30v; i b = 0 b 0.5 bdt61a v ce = 40v; i b = 0 b 0.5 bdt61b v ce = 50v; i b = 0 b 0.5 i ceo collector cutoff current BDT61C v ce = 60v; i b = 0 b 0.5 ma i ebo emitter cutoff current v eb = 5v; i c = 0 5 ma h fe dc current gain i c = 1.5a; v ce = 3v 750 v ecf c-e diode forward voltage i e = 1.5a 2.0 v switching times t on turn-on time 1.0 s t off turn-off time i c = 2a; i b1 = -i b2 = 8ma; v be(off) = -5v; r l = 20 4.5 s isc website www.iscsemi.cn
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